Extending the near-infrared band-edge absorption spectrum of silicon by proximity to a 2D semiconductor

نویسندگان

چکیده

Because of its low-cost, silicon is the standard material for photovoltaic conversion. Yet, band-edge absorption spectrum narrower than solar radiation, which reduces conversion efficiency. In this paper, it shown that absorbance can be extended to longer wavelengths by proximity a two-dimensional (2D) semiconductor. Photo-induced Hall effect, together with spectroscopy, was employed estimate increase photo-conversion efficiency 2D-platinum-diselenide/intrinsic-silicon heterostructure. The system shows significantly higher in infrared as compared single films. Angle resolved X-ray Photoelectron Spectroscopy (XPS) confirm change band structure occurs substrate at interface between two semiconductors. results are interpreted framework band-gap narrowing due hole-confinement Si, induced electron-confinement 2D film. This allows us claim Pt/PtSe2/Si sample an enhancement light near interface. Possible application effect photo-voltaic cells discussed.

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ژورنال

عنوان ژورنال: Applied Surface Science

سال: 2021

ISSN: ['1873-5584', '0169-4332']

DOI: https://doi.org/10.1016/j.apsusc.2020.147803